DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

TSSS2600(1999) Просмотр технического описания (PDF) - Vishay Semiconductors

Номер в каталоге
Компоненты Описание
производитель
TSSS2600
(Rev.:1999)
Vishay
Vishay Semiconductors Vishay
TSSS2600 Datasheet PDF : 5 Pages
1 2 3 4 5
TSSS2600
Vishay Telefunken
GaAs IR Emitting Diode in Side View Miniature Package
Description
TSSS2600 is a miniature infrared emitting diode in
GaAs on GaAs technology, molded in a clear, untinted
plastic package with cylindrical side view lens.
The device is spectrally matched to silicon photo-
diodes and phototransistors.
Features
D Low forward voltage
D Suitable for DC and high pulse current operation
D Side view emitter for miniature design
D Horizontal angle of half intensity ± 25°
D Vertical angle of half intensity ± 60°
94 8672
D Peak wavelength lp = 950 nm
D High reliability
D Good spectral matching to Si photodetectors
Applications
Infrared source in miniature light barriers or reflective sensor systems with short transmission distances and low
forward voltage requirements. Matching with silicon PIN photodiodes or phototransistors (e.g. TEST2600)
Absolute Maximum Ratings
Tamb = 25_C
Parameter
Test Conditions
Symbol
Value
Unit
Reverse Voltage
Forward Current
Peak Forward Current
Surge Forward Current
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
tp/T = 0.5, tp = 100 ms
tp = 100 ms
xt 5sec, 2 mm from case
VR
IF
IFM
IFSM
PV
Tj
Tamb
Tstg
Tsd
RthJA
5
V
100
mA
200
mA
2
A
170
mW
100
°C
–55...+100 °C
–55...+100 °C
260
°C
450
K/W
Document Number 81042
Rev. 2, 20-May-99
www.vishay.de FaxBack +1-408-970-5600
1 (5)

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]