2SB645 Просмотр технического описания (PDF) - New Jersey Semiconductor
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2SB645 Datasheet PDF : 2 Pages
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I E.IS.S.U
Cx
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.SA.
, Line.
Silicon PNP Power Transistors
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SB645
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEo= -200V(Min)
• High Power Dissipation-
: Pc= 150W(Max)@Tc=25°C
• Complement to Type 2SD665
APPLICATIONS
• Designed for power amplifier applications.
• Recommended for 200W high-fidelity audio frequency
amplifier output stage.
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-200
V
VCEO
Collector-Emitter Voltage
-200
V
VEBO
Emitter-Base Voltage
-5
V
Ic
Collector Current-Continuous
-15
A
IE
Emitter Current-Continuous
Collector Power Dissipation
PC
@Tc=25'C
Tj
Junction Temperature
15
A
150
W
150
'C
Tstg
Storage Temperature
.
-65-150
'C
3
\r
1L
1
2
PIN l.Base
3.Collestor(case)
TO-3 Package
-*4
1
+
J ' 1 -=. c
I
ZPL ^^
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- / /WTI^NN 1 t
L, t 1 &-3--H
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G
t
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111in
DIM MM MAX
A
39 00
6 25-30 26 ST
<L 7-W E.50
D
0,90
-10
t
1.40
.60
<i
10 92
H
5 46
K 11.3,0 13.50
L 1675 17X15
N 1940 19.82
g 400
u 3o,oo ^ 302- 0
V
4.30 4£g
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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