CGY2032TS/C1 Просмотр технического описания (PDF) - Philips Electronics

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производитель

CGY2032TS/C1

DECT 500 mW power amplifier

Philips Electronics 

Philips Semiconductors

DECT 500 mW power amplifier

Product specification

CGY2032TS

HANDLING

Do not operate or store near strong electrostatic fields. Meets class 1 ESD test requirements [Human Body Model

(HBM)], in accordance with “MIL STD 883C - method 3015”.

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

Rth(j-a)

thermal resistance from junction to ambient in free air; note 1

Note

1. On Philips evaluation board, Rth(j-a) value is typically 80 K/W.

VALUE

145

UNIT

K/W

DC CHARACTERISTICS

Tamb = 25 °C; unless otherwise specified.

SYMBOL

PARAMETER

Pins VDD1, VDD2 and VDD3

VDD

positive supply voltage

IDD

positive peak supply current

CONDITIONS

MIN. TYP. MAX. UNIT

VDD = 3.2 V

1.8 3.2 4.2 V

−

−

800 mA

AC CHARACTERISTICS

VDD = 3.2 V; fRF = 1900 MHz; Pi = 0 dBm; Tamb = 25 °C; duty factor δ = 50%; 50 Ω impedance system; measured and

guaranteed on the CGY2032TS evaluation board; the circuit diagram is shown in Fig.5.

SYMBOL

Pi

δ

Po

IDD

η

Pleak

H2

H3

Stab

PARAMETER

input power

duty factor

output power

total drain current

efficiency

RF leakage to output in power off state

second harmonic level

third harmonic level

stability (spurious levels)

CONDITIONS

VDD = 0 V

note 1

MIN.

−5

−

26.5

−

−

−

−

−

−

TYP.

0

50

27.5

−

55

−40

−

−

−60

MAX.

+5

100

29

500

−

−35

−30

−35

−

UNIT

dBm

%

dBm

mA

%

dBm

dBc

dBc

dBc

Note

1. The device is adjusted to provide nominal value of load power into a 50 Ω load. The device is switched off and a 6 : 1

load replaces the 50 Ω load. The device is switched on and the phase of the 6 : 1 load is varied

360 electrical degrees during a 60 seconds test period.

1999 Jul 21

4

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