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LET9130 Просмотр технического описания (PDF) - STMicroelectronics
Номер в каталоге
Компоненты Описание
производитель
LET9130
RF POWER TRANSISTORS Ldmos Enhanced Technology
STMicroelectronics
LET9130 Datasheet PDF : 6 Pages
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LET9130
TYPICAL PERFORMANCE
(BROADBAND)
Gain-Efficiency Vs Frequency
18
80
17
70
Gp
16
60
15
50
Nd
14
40
Pout = 130 W
13
Vdd = 28 V
30
Idq = 1 A
12
20
910
920
930
940
950
960
970
f (MHz)
EVM-Efficiency Vs Output Power
12
60
Vdd = 28 V
Idq = 600 mA
10
f = 960 MHz
50
8
40
6
30
Nd
4
20
2
EVM
10
0
0
1
10
100
Pout (W)
Return Loss Vs Frequency
-5
-10
-15
-20
-25
-30
-35
Pout=130 W
Vdd = 28 V
Idq = 1 A
-40
910
920
930
940
950
960
970
f (MHz)
Spectral Regrowth Vs Output Power
-50
-55
-60
-65
-70
-75
-80
-85
1
@ 400 KHz
@ 600 KHz
10
Pout (W)
Vdd =28 V
Idq = 600 mA
f = 960 MHz
100
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