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LET21008 Просмотр технического описания (PDF) - STMicroelectronics
Номер в каталоге
Компоненты Описание
производитель
LET21008
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
STMicroelectronics
LET21008 Datasheet PDF : 4 Pages
1
2
3
4
LET21008
ELECTRICAL SPECIFICATION
(T
CASE
= 25
°
C)
STATIC
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(Q)
V
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 5 V
V
DS
= 26 V
V
GS
= 10 V
V
DS
= 10 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
Test Conditions
I
DS
= 1 mA
V
DS
= 26 V
V
DS
= 0 V
I
D
= TBD
I
D
= 1 A
I
D
= 1 A
V
DS
= 26 V
V
DS
= 26 V
V
DS
= 26 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
Symbol
Test Conditions
DYNAMIC
(
f = 2170 MHz
)
P
OUT(1)
V
DD
= 26 V I
DQ
= TBD
η
D(1)
V
DD
= 26 V I
DQ
= TBD
Load
mismatch
V
DD
= 26 V P
OUT
= 8 W
ALL PHASE ANGLES
DYNAMIC
(
f = 2110 - 2170 MHz
)
P
OUT(1)
V
DD
= 26 V I
DQ
= TBD
η
D(1)
V
DD
= 26 V I
DQ
= TBD
G
P
P
OUT(W-CDMA)
η
D(W-CDMA)
V
DD
= 26 V I
DQ
= TBD P
OUT
= 8 W
ACPR -45 dBc
ACPR -45 dBc
(1) 1 dB Compression point
Min. Typ. Max. Unit
65
V
1
µ
A
1
µ
A
2.5
5.0
V
TBD
V
TBD
mho
TBD
pF
TBD
pF
TBD
pF
Min. Typ. Max. Unit
12 15
W
45 50
%
20:1 VSWR
8
W
40 45
%
11 13
dB
2.5
W
25
%
2/4
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