LET21008 Просмотр технического описания (PDF) - STMicroelectronics

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LET21008

RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

STMicroelectronics 

LET21008

RF POWER TRANSISTORS

Ldmos Enhanced Technology in Plastic Package

TARGET DATA

Designed for GSM / EDGE / IS-97 / WCDMA

applications

• EXCELLENT THERMAL STABILITY

• COMMON SOURCE CONFIGURATION

• POUT = 8 W with 11 dB gain @ 2170 MHz / 26V

• NEW LEADLESS PLASTIC PACKAGE

• ESD PROTECTION

DESCRIPTION

The LET21008 is a common source N-Channel,

enhancement-mode lateral Field-Effect RF power

transistor. It is designed for high gain, broad band

commercial and industrial applications. It operates

at 26 V in common source mode at frequencies up

to 2.1 GHz. LET21008 boasts the excellent gain,

linearity and reliability of ST’s latest LDMOS

technology mounted in the innovative leadless

SMD plastic package, PowerFLAT™.

LET21008’s superior linearity performance makes

it an ideal solution for base station applica-

tions.

PowerFLAT™(5x5)

ORDER CODE

LET21008

BRANDING

21008

PIN CONNECTION

TOP VIEW

ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C)

Symbol

Parameter

V(BR)DSS Drain-Source Voltage

VGS

Gate-Source Voltage

ID

Drain Current

PDISS Power Dissipation (@ Tc = 70°C)

Tj

Max. Operating Junction Temperature

TSTG

Storage Temperature

THERMAL DATA

Rth(j-c) Junction -Case Thermal Resistance

April, 15 2003

Value

65

-0.5 to +15

2.0

TBD

150

-65 to +150

TBD

Unit

V

V

A

W

°C

°C

°C/W

1/4

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