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LET9002

RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

STMicroelectronics 

LET9002

RF POWER TRANSISTORS

Ldmos Enhanced Technology in Plastic Package

TARGET DATA

N-CHANNEL ENHANCEMENT-MODE LATERAL

MOSFETs

• EXCELLENT THERMAL STABILITY

• COMMON SOURCE CONFIGURATION

• POUT = 2 W with 17 dB gain @ 960 MHz / 26 V

• NEW LEADLESS PLASTIC PACKAGE

• ESD PROTECTION

• SUPPLIED IN TAPE & REEL OF 3K UNITS

DESCRIPTION

The LET9002 is a common source N-Channel, en-

hancement-mode lateral Field-Effect RF power

transistor designed for broadband commercial and

industrial applications at frequencies up to 1000

MHz. The LET9002 is designed for high gain and

broadband performance operating in common

source mode at 26 V. LET9002 boasts the

excellent gain, linearity and reliability of ST’s latest

LDMOS technology mounted in the innovative

leadless SMD plastic package, PowerFLAT™.

It is ideal for digital cellular BTS applications

requiring high linearity.

PowerFLAT™(5x5)

ORDER CODE

LET9002

BRANDING

9002

PIN CONNECTION

TOP VIEW

ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C)

Symbol

Parameter

V(BR)DSS Drain-Source Voltage

VGS

Gate-Source Voltage

ID

Drain Current

PDISS Power Dissipation (@ Tc = 70°C)

Tj

Max. Operating Junction Temperature

TSTG

Storage Temperature

THERMAL DATA

Rth(j-c) Junction -Case Thermal Resistance

Value

65

-0.5 to +15

0.25

4

150

-65 to +150

20

Unit

V

V

A

W

°C

°C

°C/W

April, 15 2003

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