LET9006 Просмотр технического описания (PDF) - STMicroelectronics

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LET9006

RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

STMicroelectronics 

LET9006

RF POWER TRANSISTORS

Ldmos Enhanced Technology in Plastic Package

TARGET DATA

N-CHANNEL ENHANCEMENT-MODE LATERAL

MOSFETs

• EXCELLENT THERMAL STABILITY

• COMMON SOURCE CONFIGURATION

• POUT = 6 W with 17 dB gain @ 960 MHz / 26V

• NEW LEADLESS PLASTIC PACKAGE

• ESD PROTECTION

• SUPPLIED IN TAPE & REEL OF 3K UNITS

DESCRIPTION

The LET9006 is a common source N-Channel, en-

hancement-mode lateral Field-Effect RF power

transistor. It is designed for high gain, broad band

commercial and industrial applications. It operates

at 26 V in common source mode at frequencies up

to 1 GHz. LET9006 boasts the excellent gain,

linearity and reliability of ST’s latest LDMOS

technology mounted in the innovative leadless

SMD plastic package, PowerFLAT™.

It is ideal for digital cellular BTS applications

requiring high linearity.

PowerFLAT™(5x5)

ORDER CODE

LET9006

BRANDING

9006

PIN CONNECTION

TOP VIEW

ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C)

Symbol

Parameter

V(BR)DSS Drain-Source Voltage

VGS

Gate-Source Voltage

ID

Drain Current

PDISS Power Dissipation (@ Tc = 70°C)

Tj

Max. Operating Junction Temperature

TSTG

Storage Temperature

Value

Unit

65

V

-0.5 to +15

V

1

A

16

W

150

°C

-65 to +150

°C

THERMAL DATA

Rth(j-c) Junction -Case Thermal Resistance

5

°C/W

April, 15 2003

1/4

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