FZT1151A(1997) Просмотр технического описания (PDF) - Diodes Incorporated.

Номер в каталоге

Компоненты Описание

производитель

FZT1151A
(Rev.:1997)

PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

Diodes Incorporated. 

FZT1151A

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).

PARAMETER

SYMBOL

MIN.

VALUE

TYP. MAX.

UNIT

CONDITIONS.

Collector-Base

V(BR)CBO -45

-95

Breakdown Voltage

V

IC=-100µA

Collector-Emitter

Breakdown Voltage

VCES

-40

-90

V

IC=-100µA

Collector-Emitter

VCEO

-40

-85

Breakdown Voltage

V

IC=-10mA *

Collector-Emitter

Breakdown Voltage

VCEV

-40

-90

V

IC=-100µA, VEB=+1V

Emitter-Base

V(BR)EBO -5

-8.5

Breakdown Voltage

V

IE=-100µA

Collector Cut-Off

Current

ICBO

-0.3 -100 nA

VCB=-36V

Emitter Cut-Off Current IEBO

Collector Emitter

ICES

Cut-Off Current

-0.3 -100 nA

-0.3 -100 nA

VEB=-4V

VCE=-32V

Collector-Emitter

Saturation Voltage

VCE(sat)

Base-Emitter

Saturation Voltage

VBE(sat)

-60

-120

-140

-170

-200

-985

-90

mV

-180 mV

-220 mV

-260 mV

-300 mV

-1100 mV

IC=-0.1A, IB=-1.0mA*

IC=-0.5A, IB=-5mA*

IC=-1A, IB=-20mA*

IC=-1.8A, IB=-70mA*

IC=-3A, IB=-250mA*

IC=-3A, IB=-250mA*

Base-Emitter Turn-On VBE(on)

Voltage

-850 -1000 mV

IC=-3A, VCE=-2V*

Static Forward Current hFE

Transfer Ratio

Transition Frequency fT

270 450

250 400 800

180 300

100 190

45

IC=-10mA, VCE=-2V*

IC=-0.5A, VCE=-2V*

IC=-2A, VCE=-2V*

IC=-3A, VCE=-2V*

IC=-5A, VCE=-2V*

145

MHz IC=-50mA, VCE=-10V

f=50MHz

Output Capacitance

Ccb

40

pF

VCB=-10V, f=1MHz

Switching Times

ton

170

ns

IC=-2A, IB=-20mA,

VCC=-30V

toff

460

ns

IC=-2A, IB=±20mA,

VCC=-30V

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%.

Share Link: