MTB50N06V Просмотр технического описания (PDF) - ON Semiconductor
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MTB50N06V Datasheet PDF : 7 Pages
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MTB50N06V
TYPICAL ELECTRICAL CHARACTERISTICS
100
TJ = 25°C
80
60
40
20
VGS = 10 V
9V
8V
7V
6V
5V
0
0
0.8
1.6
2.4
3.2
4
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
100
VDS ≥ 10 V
80
60
40
100°C
25°C
TJ = − 55°C
20
0
1
2
3
4
5
6
7
8
9
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.04
VGS = 10 V
0.034
0.028
0.022
TJ = 100°C
25°C
0.016
− 55°C
0.01
0
20
40
60
80
100
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
and Temperature
0.033
TJ = 25°C
0.03
0.027
0.024
VGS = 10 V
15 V
0.021
0
20
40
60
80
100
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
2.5
VGS = 10 V
2 ID = 21 A
1.5
1
0.5
1000
VGS = 0 V
100
10
TJ = 125°C
100°C
25°C
0
− 50 − 25
0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
1
0
10
20
30
40
50
60
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−To−Source Leakage
Current versus Voltage
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