MTB50N06V Просмотр технического описания (PDF) - ON Semiconductor

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MTB50N06V

Power MOSFET 42 Amps, 60 Volts

ON Semiconductor 

MTB50N06V

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Drain−Source Breakdown Voltage

(VGS = 0 Vdc, ID = 0.25 mAdc)

Temperature Coefficient (Positive)

Zero Gate Voltage Drain Current

(VDS = 60 Vdc, VGS = 0 Vdc)

(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)

Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

(VDS = VGS, ID = 250 μAdc)

Temperature Coefficient (Negative)

Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 21 Adc)

Drain−Source On−Voltage (VGS = 10 Vdc)

(ID = 42 Adc)

(ID = 21 Adc, TJ = 150°C)

Forward Transconductance (VDS = 6.25 Vdc, ID = 20 Adc)

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time

Rise Time

Turn−Off Delay Time

Fall Time

(VDD = 25 Vdc, ID = 42 Adc,

VGS = 10 Vdc,

RG = 9.1 Ω)

Gate Charge

(See Figure 8)

(VDS = 48 Vdc, ID = 42 Adc,

VGS = 10 Vdc)

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage (Note 2)

(IS = 42 Adc, VGS = 0 Vdc)

(IS = 42 Adc, VGS = 0 Vdc, TJ = 150°C)

Symbol

V(BR)DSS

IDSS

IGSS

VGS(th)

RDS(on)

VDS(on)

gFS

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

QT

Q1

Q2

Q3

VSD

Reverse Recovery Time

(See Figure 14)

Reverse Recovery Stored

Charge

(IS = 42 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/μs)

trr

ta

tb

QRR

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

LD

(Measured from contact screw on tab to center of die)

(Measured from the drain lead 0.25″ from package to center of die)

Internal Source Inductance

LS

(Measured from the source lead 0.25″ from package to source bond pad)

2. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperature.

Min

Typ

Max

Unit

60

−

−

69

−

Vdc

−

mV/°C

μAdc

−

−

10

−

−

100

−

−

100

nAdc

2.0

2.7

4.0

Vdc

−

3.0

−

mV/°C

−

0.025 0.028 Ohm

Vdc

−

1.4

1.7

−

−

1.6

16

23

−

mhos

−

1644

2320

pF

−

465

660

−

112

230

−

12

20

ns

−

122

250

−

64

110

−

54

90

−

47

70

nC

−

9

−

−

21

−

−

16

−

Vdc

−

1.06

2.5

−

0.99

−

−

84

−

ns

−

73

−

−

11

−

−

0.28

−

μC

nH

−

3.5

−

−

4.5

−

−

7.5

−

nH

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