Characteristics TA=25°C
Parameter
Emitter
Forward Voltage
Breakdown Voltage
Reverse Current
Capacitance
Thermal Resistance, Junction to Lead
Output Detector
Repetitive Peak Off-State Voltage
IL4216
IL4217
IL4218
Off-State Voltage
IL4216
IL4217
IL4218
Off-State Current
Reverse Current
On-State Voltage
On-State Current
Surge (Non-Repetitive) On-State Current
Holding Current
Latching Current
LED Trigger Current
Turn-On Time
Turn-Off Time
Critical State of Rise of Off-State Voltage
Critical Rate of Rise of Voltage at Current
Commutation
Symbol Min. Typ.
VF
—
1.3
VBR
6.0
30
IR
—
0.1
CO
—
40
RTHJL
—
750
VDRM
600
650
VDRM
700
750
VDRM
800
850
VD(RMS)
VD(RMS)
VD(RMS)
ID(RMS)
IR(RMS)
VTM
ITM
ITSM
IH
IL
IFT
tON
tOFF
dv/dtcr
424
460
484
536
565
613
—
10
—
10
—
1.7
—
—
—
—
—
65
—
5.0
—
0.7
—
35
—
50
10000 —
5000 —
dv/dtcrq 10000 —
5000 —
Off-State Current
di/dt
—
100
Thermal Resistance, Junction to Lead
RTHJL
—
150
Package
Critical Rate of Rise of Coupled Input-Output dv(IO)/dt 5000 —
Voltage
Common Mode Coupling Capacitor
Package Capacitance
CCM
—
CIO
—
0.01
0.8
Max. Unit Condition
1.5
V
IF=20 mA
—
V
IR=10 mA
10
µA
VR=6.0 V
—
pF
VF=o V, f=1.0 MHz
—
K/W —
—
V
IDRM=100 µA
V
IDRM=100 µA
V
IDRM=100 µA
—
V
ID(RMS)=70 µA
V
ID(RMS)=70 µA
V
ID(RMS)=70 µA
100
µA
VD=600 V, TA=100°C
100
µA
VR=600 V, TA=100°C
3.0
V
IT=300 mA
300
mA PF=1.0, VT(RMS)=1.7 V
3.0
A
f=50 Hz
200
µA
VT=3.0 V
—
mA VT=2.2 V
1.3
mA VAK=5.0 V
—
µs
VRM=VDM=424 VAC
—
µs
PF=1.0, IT=300 mA
—
V/µs VD=0.67 VDRM, Tj=25°C
—
VD=0.67 VDRM, Tj=80°C
—
V/µs VD=0.67 VDRM, di/dtcrq≤15 A/ms
Tj=25°C
—
VD=0.67 VDRM, di/dtcrq≤15 A/ms
Tj=80°C
—
A/ms IT=300 mA
—
K/W —
—
V/µs IT=0 A, VRM=VDM=300 VAC
—
pF
—
—
pF
f=1.0 MHz, VIO=0 V
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–167
IL4216/4217/4218
March 17, 2000-12