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IL4217(2000) Просмотр технического описания (PDF) - Infineon Technologies

Номер в каталоге
Компоненты Описание
производитель
IL4217
(Rev.:2000)
Infineon
Infineon Technologies Infineon
IL4217 Datasheet PDF : 4 Pages
1 2 3 4
Characteristics TA=25°C
Parameter
Emitter
Forward Voltage
Breakdown Voltage
Reverse Current
Capacitance
Thermal Resistance, Junction to Lead
Output Detector
Repetitive Peak Off-State Voltage
IL4216
IL4217
IL4218
Off-State Voltage
IL4216
IL4217
IL4218
Off-State Current
Reverse Current
On-State Voltage
On-State Current
Surge (Non-Repetitive) On-State Current
Holding Current
Latching Current
LED Trigger Current
Turn-On Time
Turn-Off Time
Critical State of Rise of Off-State Voltage
Critical Rate of Rise of Voltage at Current
Commutation
Symbol Min. Typ.
VF
1.3
VBR
6.0
30
IR
0.1
CO
40
RTHJL
750
VDRM
600
650
VDRM
700
750
VDRM
800
850
VD(RMS)
VD(RMS)
VD(RMS)
ID(RMS)
IR(RMS)
VTM
ITM
ITSM
IH
IL
IFT
tON
tOFF
dv/dtcr
424
460
484
536
565
613
10
10
1.7
65
5.0
0.7
35
50
10000
5000
dv/dtcrq 10000
5000
Off-State Current
di/dt
100
Thermal Resistance, Junction to Lead
RTHJL
150
Package
Critical Rate of Rise of Coupled Input-Output dv(IO)/dt 5000
Voltage
Common Mode Coupling Capacitor
Package Capacitance
CCM
CIO
0.01
0.8
Max. Unit Condition
1.5
V
IF=20 mA
V
IR=10 mA
10
µA
VR=6.0 V
pF
VF=o V, f=1.0 MHz
°C/W
V
IDRM=100 µA
V
IDRM=100 µA
V
IDRM=100 µA
V
ID(RMS)=70 µA
V
ID(RMS)=70 µA
V
ID(RMS)=70 µA
100
µA
VD=600 V, TA=100°C
100
µA
VR=600 V, TA=100°C
3.0
V
IT=300 mA
300
mA
PF=1.0, VT(RMS)=1.7 V
3.0
A
f=50 Hz
200
µA
VT=3.0 V
mA VT=2.2 V
1.3
mA VAK=5.0 V
µs
VRM=VDM=424 VAC
µs
PF=1.0, IT=300 mA
V/µs VD=0.67 VDRM, Tj=25°C
VD=0.67 VDRM, Tj=80°C
V/µs VD=0.67 VDRM, di/dtcrq15 A/ms
Tj=25°C
VD=0.67 VDRM, di/dtcrq15 A/ms
Tj=80°C
A/ms IT=300 mA
°C/W
V/µs IT=0 A, VRM=VDM=300 VAC
pF
pF
f=1.0 MHz, VIO=0 V
Infineon Technologies, Corp. • Optoelectronics Division • Cupertino, CA (formerly Siemens Microelectronics, Inc.)
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2
IL4216/4217/4218
January 19, 2000-13

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