IKB15N60T Просмотр технического описания (PDF) - Infineon Technologies

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IKB15N60T

Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

Infineon Technologies 

TrenchStop Series

IKB15N60T

q

1nF

C iss

15V

120V

480V

10V

100pF

5V

0V0nC 20n C 4 0nC 6 0nC 8 0nC 10 0nC

QGE, GATE CHARGE

Figure 17. Typical gate charge

(IC=15 A)

C oss

C rss

10pF

0V 10V 20V 30V 40V 50V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 18. Typical capacitance as a function

of collector-emitter voltage

(VGE=0V, f = 1 MHz)

200A

150A

100A

50A

0 A1 2 V

14V

16V

18V

VGE, GATE-EMITTETR VOLTAGE

Figure 19. Typical short circuit collector

current as a function of gate-

emitter voltage

(VCE ≤ 400V, Tj ≤ 150°C)

12µs

10µs

8µs

6µs

4µs

2µs

0µs

10V

11V

12V

13V

14V

VGE, GATE-EMITETR VOLTAGE

Figure 20. Short circuit withstand time as a

function of gate-emitter voltage

(VCE=600V, start at TJ=25°C,

TJmax<150°C)

Power Semiconductors

8

Rev. 2.1 Dec-04

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