IKB15N60T Просмотр технического описания (PDF) - Infineon Technologies
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производитель
IKB15N60T
Infineon Technologies
IKB15N60T Datasheet PDF : 13 Pages
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TrenchStop Series
IKB15N60T
q
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tb
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
Qrr
Irrm
dirr/dt
Tj=25°C,
VCC=400V,IC=15A,
VGE=0 /15V,
RG=15Ω,
Lσ1)=154nH,
Cσ1)=39pF
Energy losses include
“tail” and diode
reverse recovery.
Tj=25°C,
VR=400V, IF=15A,
diF/dt=825A/µs
min.
-
-
-
-
-
-
-
-
-
-
-
Value
Typ.
17
11
188
50
0.22
0.35
0.57
34
0.24
10.4
718
Unit
max.
- ns
-
-
-
- mJ
-
-
- ns
- µC
-A
- A/µs
Switching Characteristic, Inductive Load, at Tj=175 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tb
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
Qrr
Irrm
dirr/dt
Tj=175°C,
VCC=400V,IC=15A,
VGE=0/15V,
RG= 15 Ω
Lσ1)=154nH,
Cσ1)=39pF
Energy losses include
“tail” and diode
reverse recovery.
Tj=175°C
VR=400V, IF=15A,
diF/dt=825A/µs
min.
-
-
-
-
-
-
-
-
-
-
-
Value
Typ.
17
15
212
79
0.34
0.47
0.81
140
1.0
14.7
495
Unit
max.
- ns
-
-
-
- mJ
-
-
- ns
- µC
-A
- A/µs
1) Leakage inductance Lσ an d Stray capacity C σ due to dynamic test circuit in Figure E.
Power Semiconductors
3
Rev. 2.1 Dec-04
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