HCS05D Просмотр технического описания (PDF) - Intersil

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HCS05D

Radiation Hardened Triple 3-Input NAND Gate

Intersil 

Specifications HCS10MS

TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS

OSCILLATOR

OPEN

GROUND

1/2 VCC = 3V ± 0.5V VCC = 6V ± 0.5V

50kHz

25kHz

STATIC BURN-IN I TEST CONDITIONS (Note 1)

6, 8, 12

1, 2, 3, 4, 5, 7, 9, 10, 11,

-

13

14

-

-

STATIC BURN-IN II TEST CONNECTIONS (Note 1)

6, 8, 12

7

-

1, 2, 3, 4, 5, 9, 10,

-

-

11, 13, 14

DYNAMIC BURN-IN I TEST CONNECTIONS (Note 2)

-

7

6, 8, 12

14

1, 2, 3, 4, 5, 9,

-

10, 11, 13

NOTES:

1. Each pin except VCC and GND will have a resistor of 10KΩ ± 5% for static burn-in.

2. Each pin except VCC and GND will have a resistor of 1KΩ ± 5% for dynamic burn-in.

TABLE 9. IRRADIATION TEST CONNECTIONS

OPEN

GROUND

VCC = 5V ± 0.5V

6, 8, 12

7

1, 2, 3, 4, 5, 9, 10, 11, 13, 14

NOTE: Each pin except VCC and GND will have a resistor of 47KΩ ± 5% for irradiation testing.

Group E, Subgroup 2, sample size is 4 dice/wafer 0 failures.

Spec Number 518747

5

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