GSF10A60 Просмотр технического описания (PDF) - Nihon Inter Electronics

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производитель

GSF10A60

Fast Recovery Diode

Nihon Inter Electronics 

FRD Type : GSF10A60

FEATURES

* Similar to TO-220AB Case

* Ultra – Fast Recovery

* Low Forward Voltage Drop

* Low Power Loss, High Efficiency

* High Surge Capability

* 200 Volts thru 600 Volts Types Available

OUTLINE DRAWING

Maximum Ratings

Approx Net Weight:1.85g

Rating

Repetitive Peak Reverse Voltage

Average Rectified Output Current

RMS Forward Current

Surge Forward Current

Operating JunctionTemperature Range

Storage Temperature Range

Mounting torque

Symbol

VRRM

IO

IF(RMS)

IFSM

Tjw

Tstg

GSF10A60

200

10

Tc=74°C

50 Hz Half Sine Wave

Resistive Load

15.7

120

50 Hz Half Sine Wave,1cycle

Non-repetitive

- 40 to + 150

- 40 to + 150

0.5 Recommended value

Unit

V

A

A

A

°C

°C

N•m

Electrical • Thermal Characteristics

Characteristics

Peak Reverse Current

Peak Forward Voltage

Reverse Recovery Time

Thermal Resistance

Symbol

Conditions

IRM Tj= 25°C, VRM= VRRM

VFM Tj= 25°C, IFM= 10A

trr

IFM= 10A,

-di/dt= 50 A/µs, Ta= 25°C

Rth(j-c) Junction to Case

Min.

-

-

Typ.

-

-

Max.

30

1.8

Unit

µA

V

-

-

50 ns

-

-

4 °C/W

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