GI910 Просмотр технического описания (PDF) - Vishay Semiconductors
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производитель
GI910 Datasheet PDF : 4 Pages
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www.vishay.com
GI910, GI911, GI912, GI914, GI916, GI917
Vishay General Semiconductor
100
10
1
TJ = 25 °C
Pulse Width = 300 μs
1 % Duty Cycle
0.1
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
0.01
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
10
TJ = 100 °C
1
TJ = 50 °C
0.1
TJ = 25 °C
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
10
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-201AD
0.210 (5.3)
0.190 (4.8)
DIA.
1.0 (25.4)
MIN.
0.375 (9.5)
0.285 (7.2)
0.052 (1.32)
0.048 (1.22)
DIA.
1.0 (25.4)
MIN.
Revision: 25-Jul-13
3
Document Number: 88631
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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