2SB696 Просмотр технического описания (PDF) - New Jersey Semiconductor
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2SB696 Datasheet PDF : 2 Pages
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IE.IS.S.U
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Una.
Silicon PNP Power Transistors
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SB696
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEo=-120V(Min)
• High Current Capability
• Wide Area of Safe Operation
• Complement to Type 2SD732
APPLICATIONS
• Designed for AF power amplifier applications.
• Recommended for output stage of 60W power amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25X:)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-150
V
VCEO
Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-6
V
Ic
Collector Current-Continuous
-8
A
ICM
Emitter Current-Peak
Collector Power Dissipation
PC
@TC=25-C
Tj
Junction Temperature
-12
A
80
W
150
•c
Tstg
Storage Temperature
-40-150 •c
3
PIN l.Base
J
'.Emitter
1L
3.Colle5tor(c3se)
\- 3 Package
2
—« . . AA
M»I
t
I t ip~N~*i1
11
_t
C
-JU-DJPL
_ u—»
v-. Sxt^rSl^—x,^/_Gi
t
B
Vs^^/" ~f i
H3H
linn
DIM MIN MAJ(
A
3900
B 2530 26 67
C
7.80 8, 50
D
0.50 1 10
E
f .40 1 S. O
G
10.92
H
546
K ILiD 13.50
L 1675 17.05
N 1940 19 62
0
400 4 20
U 30.0? 30 20
V
4.30 4 %t
N.I Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. I louever, NJ Semi-Conductors assumes no responsibility for any errors or omissionsdiscovered in itsuse.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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