LET9060S Просмотр технического описания (PDF) - STMicroelectronics

Номер в каталоге

Компоненты Описание

производитель

LET9060S

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

STMicroelectronics 

LET9060

2

Electrical characteristics

Electrical characteristics

TC = 25 °C

Table 4.

Symbol

Static

Test conditions

V(BR)DSS VGS = 0 V; IDS = 10 mA

IDSS VGS = 0 V; VDS = 28 V

IGSS VGS = 5 V; VDS = 0 V

VGS(Q) VDS = 28 V; ID = 100 mA

VDS(ON) VGS = 10 V; ID = 3 A

GFS VDS = 10 V; ID = 3 A

CISS VGS = 0 V; VDS = 28 V; f = 1 MHz

COSS VGS = 0 V; VDS = 28 V; f = 1 MHz

CRSS VGS = 0 V; VDS = 28 V; f = 1 MHz

Min. Typ. Max. Unit

80

V

1 µA

1 µA

2.0

5.0 V

0.8 1.2 V

2.5

mho

77

pF

39

pF

1.2

pF

Table 5. Dynamic

Symbol

Test conditions

Min. Typ. Max. Unit

POUT VDD = 28 V; IDQ = 300 mA; f = 960 MHz

60 80

-

W

GPS

VDD = 28 V; IDQ = 300 mA; POUT = 60 W; f = 960 MHz 16 17.2

-

dB

ηD

VDD = 28 V; IDQ = 300 mA; PIN = 2 W; f = 960 MHz

60 70

-

%

Load VDD = 28 V; IDQ = 300 mA; POUT = 60 W; f = 960 MHz

mismatch All phase angles

20:1

VSWR

Table 6.

ESD protection characteristics

Test conditions

Human body model

Machine model

Table 7.

Moisture sensitivity level

Test conditions

J-STD-020B

Class

2

M3

Rating

MSL 3

Doc ID 010019 Rev 1

3/11

Share Link: