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Номер в каталоге
Компоненты Описание
TSAL7300(1999) Просмотр технического описания (PDF) - Vishay Semiconductors
Номер в каталоге
Компоненты Описание
производитель
TSAL7300
(Rev.:1999)
GaAs/GaAlAs IR Emitting Diode in ø 5 mm (T–1¾) Package
Vishay Semiconductors
TSAL7300 Datasheet PDF : 6 Pages
1
2
3
4
5
6
TSAL7300
Vishay Telefunken
Absolute Maximum Ratings
T
amb
= 25
_
C
Parameter
Reverse Voltage
Forward Current
Peak Forward Current
Surge Forward Current
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
Symbol
Value
Unit
t
p
/T = 0.5, t
p
= 100
m
s
t
p
= 100
m
s
x
t 5sec, 2 mm from case
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
5
V
100
mA
200
mA
1,5
A
210
mW
100
°
C
–55...+100
°
C
–55...+100
°
C
260
°
C
350
K/W
Basic Characteristics
T
amb
= 25
_
C
Parameter
Forward Voltage
Temp. Coefficient of V
F
Reverse Current
Junction Capacitance
Radiant Intensity
Radiant Power
Temp. Coefficient of
f
e
Angle of Half Intensity
Peak Wavelength
Spectral Bandwidth
Temp. Coefficient of
l
p
Rise Time
Fall Time
Virtual Source Diameter
Test Conditions
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100
m
s
I
F
= 100 mA
V
R
= 5 V
V
R
= 0, f = 1 MHz, E = 0
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100
m
s
I
F
= 100 mA, t
p
= 20 ms
I
F
= 20 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 1 A
I
F
= 100 mA
I
F
= 1 A
method: 63% encircled
energy
Symbol Min
V
F
V
F
TK
VF
I
R
C
j
I
e
30
I
e
260
f
e
TK
f
e
ϕ
l
p
Dl
TK
l
p
t
r
t
r
t
f
t
f
ø
Typ
1.35
2.6
–1.875
25
45
350
35
–0.6
±
22
940
50
0.2
800
500
800
500
2.1
Max Unit
1.6
V
3
V
mV/K
10
m
A
pF
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
ns
ns
mm
www.vishay.de
•
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2 (6)
Document Number 81013
Rev. 1, 20-May-99
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