FX30SMJ-3 Просмотр технического описания (PDF) - MITSUBISHI ELECTRIC
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FX30SMJ-3 Datasheet PDF : 4 Pages
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PRELIMINARY NSootimcee: pTahriasmisentroict alimfinitsalasrpeescuifbicjeactitotno. change.
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
–10
TC = 25°C
Pulse Test
–8
–6
–4
ID = –45A
–30A
–2
–15A
0
0
–2 –4 –6 –8 –10
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
–50
TC = 25°C
VDS = –10V
Pulse Test
–40
–30
–20
–10
0
0
–2 –4 –6 –8 –10
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
105
7 TCh = 25°C
5 f = 1MHZ
3 VGS = 0V
2
104
7
5
Ciss
3
2
103
7
5
Coss
3
2
Crss
102–100 –2 –3 –5 –7 –101 –2 –3 –5 –7–102
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Pch POWER MOSFET
FX30SMJ-3
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
200
TC = 25°C
Pulse Test
160
120
VGS = –4V
80
–10V
40
0
–100 –2 –3 –5 –7 –101 –2 –3 –5 –7 –102
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
102
7
5
TC = 25°C
75°C
3
125°C
2
101
7
5
3
2
100
–7
–100
–2 –3
–5 –7 –101
VDS = –10V
Pulse Test
–2 –3 –5 –7
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
2
103
td(off)
7
5
3
tf
2
102
tr
7
td(on)
5
TCh = 25°C
VDD = –80V
3
VGS = –10V
RGEN = RGS = 50Ω
2
–7
–100
–2
–3
–5–7 –101 –2 –3
–5–7 –102 –2 –3
–5 –7
DRAIN CURRENT ID (A)
Jan.1999
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