FST16035(2018) Просмотр технического описания (PDF) - GeneSiC Semiconductor, Inc.

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Компоненты Описание

производитель

FST16035
(Rev.:2018)

Silicon Power Schottky Diode

GeneSiC Semiconductor, Inc. 

Silicon Power

Schottky Diode

Features

• High Surge Capability

• Types from 20 V to 40V VRRM

• Isolated to Plate

• Not ESD Sensitive

FST16020 thru FST16040

VRRM = 20 V - 40 V

IF(AV) = 160 A

TO-249AB Package

Maximum ratings, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

FST16020 FST16030 FST16035 FST16040 Unit

Repetitive peak reverse voltage

RMS reverse voltage

DC blocking voltage

Operating temperature

Storage temperature

VRRM

VRMS

VDC

Tj

Tstg

20

30

35

40

V

14

21

25

28

V

20

30

35

40

V

-55 to 150 -55 to 150 -55 to 150 -55 to 150 °C

-55 to 150 -55 to 150 -55 to 150 -55 to 150 °C

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

FST16020

Average forward current (per

pkg)

Peak forward surge current (per

leg)

Maximum instantaneous

forward voltage (per leg)

Maximum Instantaneous

reverse current at rated DC

blocking voltage (per leg)

Thermal characteristics

Thermal resistance, junction -

case (per leg)

IF(AV)

IFSM

VF

IR

RΘJC

TC = 125 °C

tp = 8.3 ms, half sine

IFM = 80 A, Tj = 25 °C

Tj = 25 °C

Tj = 100 °C

Tj = 150 °C

160

1000

0.75

1

10

30

0.50

FST16030

160

1000

0.75

1

10

30

0.50

FST16035 FST16040

160

160

1000

1000

0.75

0.75

1

1

10

10

30

30

0.50

0.50

Unit

A

A

V

mA

°C/W

Oct. 2018

http://www.diodemodule.com/silicon_products/modules/fst16020.pdf

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