IDT7187L Просмотр технического описания (PDF) - Integrated Device Technology
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IDT7187L Datasheet PDF : 8 Pages
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IDT7187S/L
CMOS STATIC RAM 64K (64K x 1-BIT)
MILITARY TEMPERATURE RANGE
DC ELECTRICAL CHARACTERISTICS(1)
(VCC = 5V ± 10%, VLC = 0.2V, VHC = VCC - 0.2V)
7187S25
7187L25
7187S35
7187L35
7187S45 7187S55/70 7187S85
7187L45 7187L55/70 7187L85
Symbol
Parameter
Power Com’l. Mil. Com’l. Mil. Com’l.
Mil. Com’l. Mil. Com’l. Mil.
ICC1
Operating Power
S
Supply Current
CS = VIL, Outputs Open
L
VCC = Max., f = 0(2)
— 105 —
— 85 —
105 —
85 —
105 — 105 — 105
85 — 85 — 85
ICC2
Dynamic Operating
S
Current
CS = VIL, Outputs Open
L
VCC = Max., f = fMAX(2)
— 130 —
— 110 —
120 —
100 —
120 — 120 — 120
95 — 90 — 90
ISB
Standby Power Supply
S
Current (TTL Level)
CS ≥ VIH, VCC = Max.,
L
Outputs Open, f = fMAX(2)
— 55 —
— 50 —
50 —
40 —
50 — 50 — 50
35 — 30/28 — 28
ISB1
Full Standby Power
S
Supply Current (CMOS
Level) CS ≥ VHC,
L
VCC=Max., VIN ≥ VHC or
VIN ≤ VLC, f = 0(2)
— 20 —
— 1.5 —
20 —
1.5 —
20 — 20 — 20
1.5 — 1.5 — 1.5
NOTES:
1. All values are maximum guaranteed values.
2. At f = fMAX address and data inputs are cycling at the maximum frequency of read cycles of 1/tRC. f = 0 means no input lines change.
Unit
mA
mA
mA
mA
2986 tbl 08
DATA RETENTION CHARACTERISTICS OVER ALL TEMPERATURE RANGES
(L Version Only) VHC = VCC - 0.2V, VLC = 0.2V
Typ. (1)
VCC @
Max.
VCC @
Symbol
Parameter
Test Condition
Min.
2.0v
3.0V
2.0V
3.0V
VDR
VCC for Data Retention
—
2.0
—
—
—
—
ICCDR
Data Retention Current
MIL.
—
10
COM’L. —
10
tCDR(3)
Chip Deselect to Data
CS ≥ VHC
0
—
Retention Time
VIN ≥ VHC or ≤ VLC
tR(3)
Operation Recovery Time
tRC(2)
—
|ILI|(3)
Input Leakage Current
—
—
15
600
900
15
150
225
—
—
—
—
—
—
—
2
2
NOTES:
1. TA = +25°C.
2. tRC = Read Cycle Time.
3. This parameter is guaranteed, but not tested.
Unit
V
µA
ns
ns
µA
2986 tbl 09
LOW VCC DATA RETENTION WAVEFORM
DATA
RETENTION
MODE
V CC
4.5V
4.5V
tCDR
V DR ≥2V
tR
CS
V IH
V IH
V DR
2986 drw 04
6.2
4
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