DS2906SZ40 Просмотр технического описания (PDF) - Dynex Semiconductor

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производитель

DS2906SZ40

Rectifier Diode

Dynex Semiconductor 

DS2906SZ

16000

14000

12000

10000

8000

6000

4000

2000

0

0

1

2

3

4

5

6

7

8

Rate of decay of forward current, dIf/dt - (A/µs)

Fig. 4 Stored charge

0.1

Conduction Effective thermal resistance

Junction to case ˚C/W

d.c.

Halfwave

3 phase 120˚

6 phase 60˚

Double side

0.0065

0.0072

0.0073

0.0076

Single side

0.013

0.0137

0.0138

0.0141

0.01

Anode side cooled

Double side cooled

350

300

250

200

150

100

50

0

0

1

2

3

4

5

6

7

8

Rate of decay of forward current, dIf/dt - (A/µs)

Fig. 5 Reverse recovery current

0.001

0.0001

0.001

0.01

0.1

1

Time - (s)

10

100

Fig. 6 Maximum (limit) transient thermal impedance -

junction to case - (˚C/W)

5/7

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