DS2906SZ40 Просмотр технического описания (PDF) - Dynex Semiconductor

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производитель

DS2906SZ40

Rectifier Diode

Dynex Semiconductor 

DS2906SZ

SURGE RATINGS

Symbol

Parameter

I

Surge (non-repetitive) forward current

FSM

I2t

I2t for fusing

IFSM

Surge (non-repetitive) forward current

I2t

I2t for fusing

Conditions

10ms half sine; T = 150oC

case

VR = 50% VRRM - 1/4 sine

10ms half sine; Tcase = 150oC

VR = 0

Max. Units

66.5

kA

22.0 x 106 A2s

83

kA

34.5 x 106 A2s

THERMAL AND MECHANICAL DATA

Symbol

Parameter

Rth(j-c)

Thermal resistance - junction to case

Rth(c-h)

Thermal resistance - case to heatsink

Tvj

Virtual junction temperature

Tstg

Storage temperature range

-

Clamping force

Conditions

Double side cooled

dc

Single side cooled

Clamping force 83.0kN

with mounting compound

Anode dc

Cathode dc

Double side

Single side

Forward (conducting)

Reverse (blocking)

Min. Max. Units

- 0.0065 oC/W

- 0.013 oC/W

- 0.013 oC/W

- 0.001 oC/W

- 0.002 oC/W

-

160

oC

-

150

oC

–55 150

oC

75.0 91.0 kN

CHARACTERISTICS

Symbol

Parameter

VFM

Forward voltage

IRM

Peak reverse current

VTO

Threshold voltage

r

Slope resistance

T

Conditions

At 3000A peak, Tcase = 25oC

At VRRM, Tcase = 150oC

At Tvj = 150˚C

At T = 150˚C

vj

Min. Max. Units

-

1.06

V

-

400 mA

-

0.78 V

- 0.0763 mΩ

3/7

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