GA1085MC1000 Просмотр технического описания (PDF) - TriQuint Semiconductor
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Компоненты Описание
производитель
GA1085MC1000 Datasheet PDF : 10 Pages
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GA1085
Table 6. Characteristics Above VDD and Below Ground Table 9. Rise and Fall Times
(Into 0 pF, 50 Ohms to 1.5 V)
Diode to GND␣ ␣ ␣ ␣ ␣ ␣ ␣ ␣ ␣ ␣ ␣ ␣ ␣ ␣ ␣ ␣ ␣
V
I (mA)
Diode Stack to VDD
V
I (mA)
0.0
0
5.0
0
–0.4
0
6.0
0
–0.5
0
7.0
0
–0.6
–5
8.0
0
–0.7
–15
9.0
0
–0.8
–35
10.0
1
–0.9
–55
11.0
5
–1.0
–75
12.0
9
–2.0
–300
–2.5
–350
–3.0
–360
Note: TriQuint does not guarantee diode operation for purposes other
than ESD protection.
Figure 11. Output Model
L1
L2
DIE
C1
C2
OUTPUT
Table 7. Device and Bond-Wire Characteristics
(Estimates)
L1
C1
2 nH
10 pF
Table 8. 28-Pin MQuad Package Characteristics
L2
1.85 nH
C2
0.40 pF
Time (ns) TR min (V) TR max (V) TF min (V) TF max (V)
0.0
0.15
0.32
3.20
3.04
0.1
0.15
0.32
3.20
3.04
0.2
0.16
0.32
3.06
2.95
0.3
0.18
0.32
2.86
2.90
0.4
0.23
0.32
2.62
2.68
0.5
0.26
0.32
2.38
2.50
0.6
0.34
0.32
2.17
2.36
0.7
0.46
0.34
2.00
2.22
0.8
0.67
0.39
1.85
2.09
0.9
0.89
0.49
1.69
1.95
1.0
1.12
0.63
1.52
1.86
1.1
1.32
0.86
1.38
1.68
1.2
1.50
1.09
1.26
1.59
1.3
1.73
1.27
1.12
1.49
1.4
1.93
1.45
0.96
1.36
1.5
2.15
1.64
0.83
1.23
1.6
2.75
2.23
0.52
0.95
1.7
2.58
2.00
0.61
1.00
1.8
2.75
2.23
0.52
0.95
1.9
2.90
2.41
0.45
0.91
2.0
3.02
2.50
0.39
0.86
2.1
3.12
2.64
0.33
0.77
2.2
3.17
2.77
0.29
0.73
2.3
3.19
2.86
0.24
0.68
2.4
3.20
2.95
0.21
0.64
2.5
3.20
2.99
0.19
0.59
2.6
3.20
3.02
0.17
0.55
2.7
3.20
3.02
0.16
0.53
2.8
3.20
3.04
0.16
0.50
2.9
3.20
3.04
0.15
0.45
3.0
3.20
3.04
0.15
0.41
3.1
3.20
3.04
0.15
0.40
3.2
3.20
3.04
0.15
0.37
3.3
3.20
3.04
0.15
0.36
3.4
3.20
3.04
0.15
0.32
3.5
3.20
3.04
0.15
0.32
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