GA1085-MC1000 Просмотр технического описания (PDF) - TriQuint Semiconductor
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GA1085-MC1000 Datasheet PDF : 10 Pages
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GA1085
Absolute Maximum Ratings1
Storage temperature
Ambient temperature with power applied 2
–65 °C to +150 °C
–55 °C to +100 °C
Supply voltage to ground potential
DC input voltage
DC input current
Package thermal resistance (MQuad)
Die junction temperature
–0.5 V to +7.0 V
–0.5 V to (VDD + 0.5) V
–30 mA to +5 mA
θJA = 45 °C/W
TJ = 150 °C␣ ␣ ␣ ␣
DC Characteristics (VDD = +5 V + 5%, TA = 0 °C to +70 °C)
Symbol Description
Test Conditions
Min3
Typ
Max3
Unit
VOHT
Output HIGH voltage VDD = Min IOH = –30 mA
2.4
3.4
V
VIN = VIH or VIL
VOHC
Output HIGH voltage VDD = Min IOH = –1 mA
3.2
4.1
V
VIN = VIH or VIL
VOL
Output LOW voltage VDD = Min IOL = 30 mA
0.27
0.5
V
VIN = VIH or VIL
VIH 4
Input HIGH level
Guaranteed input logical
2.0
V
HIGH voltage for all Inputs
VIL4
Input LOW level
Guaranteed input logical
LOW voltage for all inputs
0.8
V
IIL
IIH
II
IDDS5
VI
Input LOW current
Input HIGH current
Input HIGH current
Power supply current
Input clamp voltage
VDD = Max VIN = 0.40 V
VDD = Max VIN = 2.7 V
VDD = Max VIN = 5.5 V
VDD = Max
VDD = Min IIN = –18 mA
–156
–400
µA
0
25
µA
2
1000
µA
119
160
mA
–0.70
–1.2
V
Capacitance
Symbol
Description
Test Conditions
Min
CIN 6
Input capacitance VIN = 2.0 V at f = 1 MHz
Typ
Max
Unit
6
pF
Notes:
1. Exceeding these parameters may damage the device.
2. Maximum ambient temperature with device not switching and unloaded.
3. Typical limits are at VDD = 5.0 V and TA = 25 °C.
4. These are absolute values with respect to device ground and all overshoots due to system or tester noise are included.
5. This parameter is measured with device not switching and unloaded.
6. These parameters are not 100% tested, but are periodically sampled.
4
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