FZT688B Просмотр технического описания (PDF) - KEXIN Industrial

Номер в каталоге

Компоненты Описание

производитель

FZT688B

NPN Silicon Planar Medium Power High Gain Transistor

KEXIN Industrial 

SMD Type

Transistors

NPN Silicon Planar Medium

Power High Gain Transistor

FZT688B

Features

Extremely low equivalent on resistance; RCE(sat)83mÙ at 3A.

Gain of 400 at IC=3 Amps and very low saturation voltage.

SOT-223

6.50+0.2

-0.2

3.00+0.1

-0.1

4

Unit: mm

3.50+0.2

-0.2

0.90+0.2

-0.2

7.00+0.3

-0.3

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Peak pulse current

Continuous collector current

Power dissipation

Operating and storage temperature range

1

2

3

2.9

4.6

0.70+0.1

-0.1

1 base

2 collector

3 emitter

Symbol

Rating

Unit

VCBO

12

V

VCEO

12

V

VEBO

5

V

IC

4

A

ICM

10

A

Ptot

2

W

Tj,Tstg

-55 to +150

www.kexin.com.cn 1

Share Link: