FZT1049A(2007) Просмотр технического описания (PDF) - Diodes Incorporated.

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производитель

FZT1049A
(Rev.:2007)

SOT 223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

Diodes Incorporated. 

SOT 223 NPN SILICON PLANAR

MEDIUM POWER HIGH GAIN TRANSISTOR

ISSUE 2 - JUNE 2007

FZT1049A

FEATURES

C

* VCEO = 25V

* 5 Amp Continuous Current

* 20 Amp Pulse Current

* Low Saturation Voltage

* High Gain

* Extremely Low Equivalent On-resistance; RCE(sat) = 50mΩ at 5A

E

C

B

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Base Current

Power Dissipation at Tamb=25°C †

Operating and Storage Temperature

Range

SYMBOL

VCBO

VCEO

VEBO

ICM

IC

IB

Ptot

Tj:Tstg

VALUE

80

25

5

20

5

500

2.5

-55 to +150

UNIT

V

V

V

A

A

mA

W

°C

† The power which can be dissipated assuming the device is mounted in typical manner on a PCB

with copper equal to 2 inches x 2 inches.

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