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FZT796ATA

200V PNP MEDIUM POWER HIGH GAIN TRANSISTOR IN SOT223

Diodes Incorporated. 

FZT796A

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Collector-Base Breakdown Voltage

BVCBO

-200

—

Collector-Emitter Breakdown Voltage (Note 9)

BVCEO

-200

—

Emitter-Base Breakdown Voltage

Collector-Base Cut-Off Current

Collector-Emitter Cut-Off Current

Emitter Cut-Off Current

BVEBO

-7

—

ICBO

—

—

ICES

—

—

IEBO

—

—

DC Current Gain (Note 9)

300

—

300

—

hFE

250

—

100

—

—

Collector-Emitter Saturation Voltage (Note 9)

VCE(sat)

—

—

Base-Emitter Saturation Voltage (Note 9)

Base-Emitter Turn-On Voltage (Note 9)

Input Capacitance

Output Capacitance

VBE(sat)

—

VBE(on)

—

Cibo

—

Cobo

—

—

—

—

—

-0.67

225

12

Current Gain-Bandwidth Product

fT

100

—

Turn-On Time

Turn-Off Time

ton

—

100

toff

—

3,200

Note:

9. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%.

Max

—

—

—

-100

-100

-100

800

—

—

—

-200

-300

-300

-0.95

—

—

—

—

—

—

Unit

V

V

V

nA

nA

nA

—

mV

V

V

pF

pF

MHz

ns

ns

Test Condition

IC = -100µA

IC = -10mA

IE = -100µA

VCB = -150V

VCE = -150V

VEB = -6V

IC = -10mA, VCE = -10V

IC = -100mA, VCE = -10V

IC = -300mA, VCE = -10V

IC = -400mA, VCE = -10V

IC = -50mA, IB = -2mA

IC = -100mA, IB = -5mA

IC = -200mA, IB = -20mA

IC = -200mA, IB = -20mA

IC = -200mA, VCE = -10V

VEB = -0.5V, f = 1MHz

VCB = -10V, f = 1MHz

VCE = -5V, IC = -50mA,

f=50MHz

VCC = -50V, IC = -100mA

IB1 = -IB2 = 10mA

FZT796A

Document number: DS33172 Rev. 4 - 2

4 of 7

www.diodes.com

October 2015

© Diodes Incorporated

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