FZT491 Просмотр технического описания (PDF) - TY Semiconductor

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Компоненты Описание

производитель

FZT491

NPN Silicon Planar Medium Power Transistor

TY Semiconductor 

SMD Type

TransistIoCrs

Product specification

FZT491

■ Features

● Power Dissipation: PC=2W

● Continuous Collector Current: IC=1A

SOT-223

6.50+0.2

-0.2

Unit: mm

3.50+0.2

-0.2

3.00+0.1

-0.1

4

1

2

3

2.9

4.6

0.70+0.1

-0.1

0.90+0.2

-0.2

7.00+0.3

-0.3

1 Base

2 Collector

3 Emitter

4 Collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Continuous Collector Current

power dissipation

Junction temperature

Storage temperature

Symbol

Rating

Unit

VCBO

80

V

VCEO

60

V

VEBO

5

V

IC

1

A

PC

2

W

Tj

150

℃

Tstg

-55 to +150

℃

■ Electrical Characteristics Ta = 25℃

Parameter

Collector to base breakdown voltage

Collector to emitter breakdown voltage

Emitter to base breakdown voltage

Collector cutoff current

Emitter Cut-Off Current

DC current gain

Collector to emitter saturation voltage

Output capacitance

Transition frequency

■ Marking

Marking

491

Symbol

Test conditons

VCBO IC=100μA

VCEO IC=10mA

VEBO IE=100μA

ICBO VCB = 60 V, IE = 0

IEBO VEB=4V,IC=0

IC = 1.0 mA; VCE = 5V

hFE IC = 500mA; VCE = 5V

IC = 1A; VCE = 5V

IC = 500mA; IB = 50mA

VCE(sat)

IC = 1A; IB = 100mA

Cob VCB = 10 V, IE = 0,f=1.0MHz

fT IC = 50 mA; VCE =10V; f = 100 MHz

Min Typ Max Unit

80

V

60

V

5

V

100 nA

100 nA

100

100

300

80

0.25 V

0.5 V

10 pF

150

MHz

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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