FS1009BH Просмотр технического описания (PDF) - Formosa Technology
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FS1009BH Datasheet PDF : 4 Pages
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FS1009.H
Fig. 1: Maximum average power dissipation
versus average on-state current.
P (W)
16
14
12
10
8
6
4
2
0
0 1 2 3 4 5 6 7 8 9 10
IT(av)(A)
Fig. 3: Relative variation of thermal impedance
junction to case versus pulse duration.
K = [Zth(j-c) / Rth (j-c)]
1.0
0.5
0.2
0.1
tp (s)
1E-3
1E-2
1E-1
1E+0
Fig. 5: Non repetitive surge peak on-state
current versus number of cycles.
I TSM (A)
160
140
120
Tj initial = 25 ºC
F = 50 Hz
100
80
60
40
20
0
Number of cycles
1
10
100
1000
STANDARD SCR
Fig. 2: Average and D.C. on-state current
versus case temperature.
IT(av)(A)
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
Tc (ºC)
0 25 50 75 100 125
Fig. 4: Relative variation of gate trigger
current and holding current versus junction
temperature.
IGT, IH (Tj) / IGT, IH (Tj = 25 ºC)
2.0
1.8
1.6
IGT
1.4
1.2
IH
1.0
0.8
0.6
0.4
0.2
0.0
-40 -20 0
Tj (ºC)
20 40 60 80 100 120 140
Fig. 7: Non repetitive surge peak on-state
current for a sinusoidal pulse with width:
tp < 10 ms, and corresponding value of I2t.
ITSM(A). I2t (A2s)
Tj initial = 25 ºC
1000
ITSM
I2 t
100
10
1
tp(ms)
10
Dec - 02
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