DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

FS1009MH Просмотр технического описания (PDF) - Formosa Technology

Номер в каталоге
Компоненты Описание
производитель
FS1009MH
FAGOR
Formosa Technology FAGOR
FS1009MH Datasheet PDF : 4 Pages
1 2 3 4
FS1009.H
STANDARD SCR
Electrical Characteristics
SYMBOL
PARAMETER
CONDITIONS
IGT
IDRM / IRRM
VTM
VGT
VGD
IH
IL
dv / dt
di / dt
Rth(j-c)
Rth(j-a)
Gate Trigger Current
VD = 12 VDC , RL = 33. Tj = 25 ºC
Off-State Leakage Current VD = VDRM , RGK = 220Tj = 125 ºC
VR = VRRM ,
Tj = 25 ºC
On-state Voltage
Gate Trigger Voltage
Gate Non Trigger Voltage
at IT = 20 Amp, tp = 380 µs, Tj = 25 ºC
VD = 12 VDC , RL = 33, Tj = 25 ºC
VD = VDRM , RL = 3.3K, RGK = 220,
Tj = 110 ºC
Holding Current
IT = 100 mA , Gate open
Latching Current
IG = 1.2 IGT
Tj = 25 ºC
Critical Rate of Voltage Rise VD = 0.67 x VDRM , Gate open
Critical Rate of Current Rise IG = 2 x IGT Tr 100 ns, F = 60 Hz,
Tj = 125 ºC
Thermal Resistance
Junction-Case for DC
Thermal Resistance
Junction-Amb
MIN
MAX
MAX
MAX
MAX
MAX
MIN
MAX
TYP
MIN
MIN
Vt0
Threshold Voltage
Rd
Dynamic resistance
Tj = 125 ºC
Tj = 125 ºC
MAX
MAX
SENSITIVITY
09
2
15
2
0.01
1.6
1.5
0.2
30
50
200
50
2.5
60
0.85
30
Unit
mA
mA
V
V
V
mA
mA
V/µs
A/µs
ºC/W
ºC/W
V
m
PART NUMBER INFORMATION
FAGOR
SCR
CURRENT
F S 10
09 B H 00 TU
PACKAGING
FORMING
CASE
VOLTAGE
SENSITIVITY
Dec - 02

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]