FMBT3906DW1-H Просмотр технического описания (PDF) - Formosa Technology
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FMBT3906DW1-H Datasheet PDF : 10 Pages
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Dual PNP Epitaxial Planar Transistor
FMBT3906DW1
Formosa MS
200mA Silicon PNP Epitaxial Planar
Transistor
Features
• High collector-emitterbreakdien voltage.
(BVCEO = -40V@IC=-1.0mA)
• Small load switch transistor with high gain and low
stauration voltage, is designed for general purpose
amflifier and switching applications at collector current.
• Offer PNP+ PNP in one package
recommended
• Capable of 150mW power dissipation.
• Lead-free parts for green partner, exceeds environmental
standards of MIL-STD-19500 /228
• Suffix "-H" indicates Halogen-free part, ex.FMBT3906DW1-H
Mechanical data
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, SOT-363
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
• Polarity : See Diagram
• Mounting Position : Any
• Weight : Approximated 0.006 gram
Package outline
SOT-363
.087(2.20)
.079(2.00)
.053(1.35)
.045(1.15)
.018(0.46)
.010(0.26)
.014(0.35)
.006(0.15)
.026(0.65)Typ. .010(0.25)
.003(0.08)
.004(0.10)
Max.
.016(0.40)
.012(0.30)
.043(1.10)
.035(0.90)
Dimensions in inches and (millimeters)
3 21
Q
Q
456
Maximum ratings (AT TA=25oC unless otherwise noted)
PARAMETER
CONDITIONS
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
MIN.
TYP.
MAX. UNIT
-40 V
-40 V
-5.0 V
-200 mA
Total device dissipation FR-5 board TA = 25OC
(1)
Thermal resistance
Operating temperature
Junction to ambient
Storage temperature
1.FR-5 = 1.0 X 0.75 X0.062 in.
PD
RθJA
TJ
TSTG
-55
-65
150 mW
833
+150
+150
OC/W
oC
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Page 2
Document ID Issued Date
DS-231113
2008/02/10
Revised Date Revision
2010/03/10
B
Page.
10
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