ZTX1055A Просмотр технического описания (PDF) - Diodes Incorporated.

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Компоненты Описание

производитель

ZTX1055A

NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

Diodes Incorporated. 

ZTX1055A

TYPICAL CHARACTERISTICS

0.8

+25°C

0.6

0.4

I+/I*=20

I+/I*=30

I+/I*=50

0.2

1mA 10mA 100mA

1A

10A

IC-Collector Current

VCE(sat) v IC

0.8

I+/I*=20

0.6

0.4

0.2

-55°C

+25°C

+100°C

+175°C

1mA 10mA 100mA

1A

10A

IC-Collector Current

VCE(sat) v IC

V+-=10V

600

400

200

+100°C

+25°C

-55°C

1mA 10mA 100mA

1A

10A

IC-Collector Current

hFE v IC

1.0

V+-=10V

0.8

-55°C

+25°C

0.6

+100°C

0.4

+175°C

0.2

1mA 10mA 100mA

1A

10A

IC-Collector Current

VBE(on) v IC

1.0 I+/I*=20

0.8 -55°C

0.6 +25°C

0.4 +100°C

+175°C

0.2

1mA 10mA 100mA

1A

10A

IC-Collector Current

VBE(sat) v Ic

10

Single Pulse Test Tamb=25C

1

DC

1s

100ms

0.1

10ms

1ms

100us

0.01

0.1V

1V

10V

100V

VCE - Collector Voltage

Safe Operating Area

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