ZTX1055A Просмотр технического описания (PDF) - Diodes Incorporated.
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ZTX1055A Datasheet PDF : 4 Pages
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ZTX1055A
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
175
280
V
IC=100µA
Collector-Emitter
Breakdown Voltage
VCES
175
280
V
IC=100µA
Collector-Emitter
Breakdown Voltage
VCEO
120
150
V
IC=10mA
Collector-Emitter
Breakdown Voltage
VCEV
175
280
V
IC=100µA, VEB=1V
Emitter-Base Breakdown V(BR)EBO
Voltage
5
8.8
V
IE=100µA
Collector Cut-Off Current ICBO
Emitter Cut-Off Current IEBO
Collector Emitter Cut-Off ICES
Current
0.3
10
0.3
10
0.3
10
nA
VCB=130V
nA
VEB=4V
nA
VCES=130V
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
VCE(sat)
VBE(sat)
22
50
mV
IC=0.1A, IB=5mA*
120
160
mV
IC=1A, IB=20mA*
220
310
mV
IC=3A, IB=150mA*
950
1000 mV
IC=3A, IB=150mA*
Base-Emitter Turn-On
Voltage
VBE(on)
810
900
mV
IC=3A, VCE=10V*
Static Forward Current hFE
Transfer Ratio
Transition Frequency
fT
275
400
300
450
1200
50
110
15
IC=10mA, VCE=10V*
IC=1A, VCE=10V*
IC=3A, VCE=10V*
IC=6A, VCE=10V*
130
MHz IC=50mA, VCE=10V
f=100MHz
Output Capacitance
Switching Times
Cobo
ton
toff
17
30
pF
90
ns
2400
ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
VCB=10V, f=1MHz
IC=1A, IB=10mA, VCC=50V
IC=1A, IB=±10mA,
VCC=50V
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