ZHCS2000(2015) Просмотр технического описания (PDF) - Diodes Incorporated.

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ZHCS2000
(Rev.:2015)

40V SURFACE MOUNT SCHOTTKY BARRIER DIODE

Diodes Incorporated. 

ZHCS2000

Electrical Characteristics (@TA = +25°C unless otherwise specified.)

Characteristic

Reverse Breakdown Voltage

Forward Voltage (Note 7)

Reverse Current

Diode Capacitance

Reverse Recovery Time

Symbol Min

Typ

V(BR)R

40

-

-

290

-

340

-

380

VF

-

420

-

485

-

420

IR

-

160

CD

-

50

trr

-

5.5

Notes: 7. Measured under pulsed conditions. Pulse width = 300μS. Duty cycle ≤ 2%.

Max

-

325

385

445

500

615

-

300

-

-

Unit

Test Condition

V IR = 1mA

IF = 500mA

IF = 1000mA

mV IF = 1500mA

IF = 2000mA

IF = 3000mA

IF = 2000mA, TA = +100°C

A VR = 30V

pF f = 1MHz, VR = 25V

Switched from IF = 500mA to

ns IR = 500mA

Measured @ IR = 50mA

ZHCS2000

Document number: DS33221 Rev. 5 - 2

3 of 6

www.diodes.com

March 2015

© Diodes Incorporated

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