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FJAFS1510ATU Просмотр технического описания (PDF) - ON Semiconductor

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FJAFS1510ATU
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FJAFS1510ATU Datasheet PDF : 14 Pages
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FJAFS1510A
ESBCRated NPN Power Transistor
November 2012
Applications
• High-Voltage and High-Speed Power Switches
• Emitter-Switched Bipolar/MOSFET Cascodes
(ESBC™)
• Smart Meters, Smart Breakers, SMPS,
HV Industrial Power Supplies
• Motor Drivers and Ignition Drivers
ESBC Features (FDC655 MOSFET)
VCS(ON)
0.426 V
IC
Equiv. RCS(ON)
6A
0.071 Ω(1)
• Low Equivalent On Resistance
• Very Fast Switch: 150 kHz
• Avalanche Rated
• Low Driving Capacitance, No Miller Capacitance
• Low Switching Losses
• Reliable HV switch: No False Triggering due to
High dv/dt Transients
Description
The FJAFS1510A is a low-cost, high-performance power
switch designed to provide optimal performance when
used in an ESBC™ configuration in applications such as:
power supplies, motor drivers, smart grid, or ignition
switches. The power switch is designed to operate up to
1550 volts and up to 6amps, while providing exceptionally
low on-resistance and very low switching losses.
The ESBC™ switch is designed to be driven using off-
the-shelf power supply controllers or drivers. The
ESBC™ MOSFET is a low-voltage, low-cost, surface-
mount device that combines low-input capacitance and
fast switching. The ESBC™ configuration further mini-
mizes the required driving power because it does not
have Miller capacitance.
The FJAFS1510A provides exceptional reliability and a
large operating range due to its square Reverse-Bias-
Safe-Operating-Area (RBSOA) and rugged design. The
device is avalanche rated and has no parasitic transistors
so is not prone to static dv/dt failures.
The power switch is manufactured using a dedicated
high-voltage bipolar process and is packaged in a high-
voltage TO-3PF package.
1
TO-3PF
1.Base 2.Collector 3.Emitter
Figure 1. Pin Configuration
C2
1
B
E3
C
B
FJAFS1510A
FDC655
G
S
Figure 2. Internal Schematic Diagram Figure 3. ESBC Configuration(2)
Ordering Information
Part Number
FJAFS1510ATU
Marking
J1510A
Package
TO-3PF
Notes:
1. Figure of Merit.
2. Other Fairchild MOSFETs can be used in this ESBC application.
Packing Method
TUBE
© 2012 Fairchild Semiconductor Corporation
FJAFS1510A Rev. A2
1
Remarks
www.fairchildsemi.com

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