FJX4006R Просмотр технического описания (PDF) - ON Semiconductor

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FJX4006R

PNP Epitaxial Silicon Transistor with Bias Resistor

ON Semiconductor 

Thermal Characteristics(1)

Values are at TA = 25°C unless otherwise noted.

Symbol

Parameter

Value

Power Dissipation

200

PD

Derate Above TA = 25°C

1.60

RθJA Thermal Resistance, Junction to Ambient

625

Note:

1. PCB size: FR-4 76 x 114 x 0.6T mm3 (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.

Unit

mW

mW/°C

°C/W

Electrical Characteristics

Values are at TA = 25°C unless otherwise noted.

Symbol

BVCBO

BVCEO

ICBO

hFE

VCE(sat)

fT

Cob

VI(off)

VI(on)

R1

R1/R2

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Collector Cut-Off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Output Capacitance

Current Gain Bandwidth Product

Input-Off Voltage

Input-On Voltage

Input Resistor

Resistor Ratio

Conditions

IC = -10 μA, IE = 0

IC = -100 μA, IB = 0

VCB = -40 V, IE = 0

VCE = -5 V, IC = -5 mA

IC = -10 mA, IB = -0.5 mA

VCB = -10 V, IE = 0,

f = 1.0 MHz

VCE = -10 V, IC = -5 mA

VCE = -5 V, IC = -100 μA

VCE = -0.3 V, IC = -1 mA

Min.

-50

-50

68

-1.4

7

0.19

Typ.

5.5

200

10

0.21

Max.

-0.1

-0.3

-0.3

13

0.24

Unit

V

V

μA

V

pF

MHz

V

V

kΩ

© 2002 Fairchild Semiconductor Corporation

FJX4006R Rev. 1.1.2

2

www.fairchildsemi.com

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