FGB3245G2-F085 Просмотр технического описания (PDF) - ON Semiconductor

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производитель

FGB3245G2-F085

EcoSPARK®2 320mJ, 450V, N-Channel Ignition IGBT

ON Semiconductor 

Typical Performance Curves

100

RG = 1KΩ, VGE = 5V, VCE = 100V

TJ = 25oC

10

TJ = 150oC

SCIS Curves valid for Vclamp Voltages of <430V

1

1

10

100

tCLP, TIME IN CLAMP (μS)

1000

Figure 1. Self Clamped Inductive Switching

Current vs. Time in Clamp

40

RG = 1KΩ , VGE = 5V, VCE = 100V

30

20

TJ = 25oC

10

TJ = 150oC

SCIS Curves valid for Vclamp Voltages of <430V

0

0

3

6

9

12

15

L, INDUCTANCE (mHy)

Figure 2. Self Clamped Inductive Switching

Current vs. Inductance

1.20

1.15

VGE = 3.7V

VGE = 4.0V

ICE = 6A

1.10

1.05

VGE = 8V

VGE = 5V

VGE = 4.5V

1.00

-50 -25 0 25 50 75 100 125 150 175

TJ, JUNCTION TEMPERTURE (oC)

Figure 3. Collector to Emitter On-State Voltage

vs. Junction Temperature

1.45

ICE = 10A

1.40

VGE = 3.7V

1.35

VGE = 4.0V

1.30

VGE = 4.5V

1.25

1.20

VGE = 8V

VGE = 5V

1.15

-50 -25 0 25 50 75 100 125 150 175

TJ, JUNCTION TEMPERTURE (oC)

Figure 4. Collector to Emitter On-State Voltage

vs. Junction Temperature

40

VGE = 8.0V

VGE = 5.0V

30 VGE = 4.5V

VGE = 4.0V

VGE = 3.7V

20

40

VGE = 8.0V

VGE = 5.0V

30 VGE = 4.5V

VGE = 4.0V

VGE = 3.7V

20

10

TJ = -40oC

0

0

1

2

3

4

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

Figure 5. Collector to Emitter On-State Voltage

vs. Collector Current

10

TJ = 25oC

0

0

1

2

3

4

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

Figure 6. Collector to Emitter On-State Voltage

vs. Collector Current

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