FGB3245G2-F085 Просмотр технического описания (PDF) - ON Semiconductor
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FGB3245G2-F085 Datasheet PDF : 8 Pages
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Device Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
BVCER Collector to Emitter Breakdown Voltage (IC = 1mA)
BVECS Emitter to Collector Voltage - Reverse Battery Condition (IC = 10mA)
ESCIS25 Self Clamping Inductive Switching Energy (Note 1)
ESCIS150 Self Clamping Inductive Switching Energy (Note 2)
IC25
Collector Current Continuous, at VGE = 4.0V, TC = 25°C
IC110 Collector Current Continuous, at VGE = 4.0V, TC = 110°C
VGEM Gate to Emitter Voltage Continuous
PD
Power Dissipation Total, at TC = 25°C
Power Dissipation Derating, for TC > 25oC
TJ
Operating Junction Temperature Range
TSTG Storage Junction Temperature Range
TL
Max. Lead Temp. for Soldering (Leads at 1.6mm from case for 10s)
TPKG Max. Lead Temp. for Soldering (Package Body for 10s)
ESD
Electrostatic Discharge Voltage at100pF, 1500Ω
CDM-Electrostatic Discharge Voltage at 1Ω
Package Marking and Ordering Information
Device Marking
FGD3245G2
FGB3245G2
Device
FGD3245G2-F085
FGB3245G2-F085
Package
TO252AA
TO263AB
Reel Size
330mm
330mm
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Rating
450
28
320
180
23
23
±10
150
1.1
-40 to +175
-40 to +175
300
260
4
2
Units
V
V
mJ
mJ
A
A
V
W
W/oC
oC
oC
oC
oC
kV
kV
Tape Width
16mm
24mm
Quantity
2500 units
800 units
Min Typ Max Units
Off State Characteristics
BVCER
BVCES
BVECS
BVGES
ICER
IECS
R1
R2
ICE = 2mA, VGE = 0,
Collector to Emitter Breakdown Voltage RGE = 1KΩ,
TJ = -40 to 150oC
ICE = 10mA, VGE = 0V,
Collector to Emitter Breakdown Voltage RGE = 0,
TJ = -40 to 150oC
Emitter to Collector Breakdown Voltage
ICE = -75mA, VGE = 0V,
TJ = 25°C
Gate to Emitter Breakdown Voltage IGES = ±2mA
Collector to Emitter Leakage Current VCE = 250V, RGE = 1KΩ
Emitter to Collector Leakage Current VEC = 24V,
Series Gate Resistance
Gate to Emitter Resistance
TJ = 25oC
TJ = 150oC
TJ = 25oC
TJ = 150oC
On State Characteristics
VCE(SAT) Collector to Emitter Saturation Voltage
VCE(SAT) Collector to Emitter Saturation Voltage
VCE(SAT) Collector to Emitter Saturation Voltage
ICE = 6A, VGE = 4V,
ICE = 10A, VGE = 4.5V,
ICE = 15A, VGE = 4.5V,
TJ = 25oC
TJ = 150oC
TJ = 150oC
420 - 480 V
440 - 500 V
28 -
-
V
±12 ±14 -
V
-
- 25 μA
-
-
1 mA
-
-
1
mA
-
- 40
- 120 - Ω
10K - 30K Ω
- 1.13 1.25 V
- 1.32 1.50 V
- 1.64 1.85 V
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