ESDA14V2SCX Просмотр технического описания (PDF) - STMicroelectronics
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ESDA14V2SCX Datasheet PDF : 9 Pages
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ESDAxxSCx
Characteristics
Table 4. Electrical characteristics - values (Tamb = 25 °C)
VBR @ IR
IRM @ VRM
VCL @ IPP
αT
C
VF@ IF
Order codes min. max.
max.
max.
max.(1) typ.
max.
0 V bias
V
V
mA µA
V
V
A 10-4/°C pF
V mA
ESDA5V3SC5
ESDA5V3SC6
5.3
5.9
1
2
3
21
22
5
320 1.25 200
ESDA6V1SC5
ESDA6V1SC6
6.1
7.2
1
2
5.25
19
18
6
190 1.25 200
ESDA14V2SC5
ESDA14V2SC6
14.2 15.8
1
5
12
35
14
10
100 1.25 200
ESDA19SC6
19
21
1
0.1
15
39
13
8.5
ESDA25SC6
25
30
1
1
24
51
9
10
1. VBR @ TJ = VBR @ 25 °C x (1 + αT x (TJ – 25))
80
1.2 10
60
1.2 10
Figure 3. Peak power dissipation versus initial Figure 4. Peak pulse power versus exponential
junction temperature
pulse duration
(Tj initial = 25 °C)
PPP[Tj initial] / PPP[Tj initial=25°C]
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Tj initial (°C)
0.0
0
25
50
75
100
125
150
10000 PPP (W)
1000
100
1
ESDA5V3 - ESDA6V1
ESDA14V2 - ESDA19 - ESDA25
tp (µs)
10
100
Figure 5. Clamping voltage versus peak pulse
current (Tj initial = 25 °C). Rectangular
waveform tp = 2.5 µs
IP P (A )
50.0
10.0
E S DA19S C 6
E S DA25S C 6
E S DA14V 2S C 5/S C 6
E S DA6V 1S C 5/S C 6
1.0
E S DA5V 3S C 5/S C 6
0.1
0
V C L (V )
tp=2 . 5 µs
5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80
Figure 6. Capacitance versus reverse applied
voltage
C (pF )
500
100
E S DA5V3S C 5/S C 6
E S DA6V1S C 5/S C 6
F =1MHz
V OS C =30mV R MS
10
1
2
E S DA14V2S C 5/S C 6
V R (V )
5
10
E S DA19S C 6
E S DA25S C 6
20
50
DocID7056 Rev 10
3/9
9
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