ESM765-800 Просмотр технического описания (PDF) - STMicroelectronics

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производитель

ESM765-800

RECOVERY RECTIFIER DIODES

STMicroelectronics 

ESM765-800

THERMAL RESISTANCES

Symbol

Rth(j-c)

Junction to case

Parameter

Value

2

Unit

°C/W

STATIC ELECTRICAL CHARACTERISTICS

Symbol

Parameters

Test conditions

IR *

Reverse leakage current

Tj = 25°C VR = VRRM

Tj = 100°C

VF ** Forward voltage drop

Tj = 25°C

Tj = 100°C

IF = 10 A

Pulse test : * tp = 5 ms, δ < 2 %

** tp = 380 µs, δ < 2 %

To evaluate the conduction losses use the following equation :

P = 1.2 x IF(AV) + 0.015 x IF2(RMS)

VF = 1.2 + 0.015 IF

Min. Typ. Max. Unit

20 mA

1

mA

1.4

V

1.35

RECOVERY CHARACTERISTICS

Symbol

trr

Qrr

Tj = 25°C

Tj = 25°C

Test conditions

Min. Typ. Max. Unit

IF = 1A dIF/dt = - 15A/µs VR = 30V

300 ns

IF = 10A dIF/dt = - 50A/µs VR = 200V

2.3

µC

Fig. 1: Low frequency power losses versus Fig. 2: Peak current versus form factor.

average current.

2/5

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