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ECG001F-G Просмотр технического описания (PDF) - TriQuint Semiconductor

Номер в каталоге
Компоненты Описание
производитель
ECG001F-G
TriQuint
TriQuint Semiconductor TriQuint
ECG001F-G Datasheet PDF : 6 Pages
1 2 3 4 5 6
Application Circuit
J4
U1
C1
J3
C3
C2
ECG001F-G
InGaP HBT Gain Block
Vcc
Icc = 30 mA
RF IN
C1
Blocking
Capacitor
R4
Bias
Resistor
C4
Bypass
Capacitor
C3
0.018 µF
L1
RF Choke
ECG001F
RF OUT
C2
Blocking
Capacitor
Bill of Material (1)
Reference Des. Value Description
Manuf. Part Number
U1
n/a
InGaP HBT Gain Block
TriQuint
ECG001F-G
L1
39nH
Wirewound Inductor, 0603
various
C1, C2
56pF
Chip Capacitor, 0603
various
C3
0.018 μF Chip Capacitor, 0603
various
C4
n/a
Do Not Place
R4 (2)
51 Ω
1% Tolerance, 0805
various
Notes:
1. Component values listed for the application have been selected to achieve optimal broadband performance.
2. The value of R4 is dependent upon the supply voltage and provides bias stability over temperature.
3. The minimum recommended supply voltage is +5 V.
4
Recommended Component Values (1)
Frequency (MHz)
50
500
900
1900
2200
L1
820 nH
220 nH
68 nH
27 nH
22 nH
C1, C2, C3
.018 uF
1000 pF
100 pF
68 pF
68 pF
Notes:
1. The values for the components are dependent upon the intended frequency of operation.
2500
18 nH
56 pF
3500
15 nH
39 pF
Recommended Bias Resistor Values
VSUPPLY (V)
R4 (Ω)
Component Size
5
53.3
0805
6
86.7
0805
8
153
1210
9
187
1210
10
220
2010
12
287
2010
Datasheet: Rev. A 12-05-14
© 2014 TriQuint
- 4 of 6 -
Disclaimer: Subject to change without notice
www.triquint.com

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