ECG001F-G Просмотр технического описания (PDF) - TriQuint Semiconductor
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ECG001F-G Datasheet PDF : 6 Pages
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ECG001F-G
InGaP HBT Gain Block
Typical RF Performance
Test conditions unless otherwise noted: VSUPPLY = +5 V, Icc = 30 mA (typ.), RBIAS = 51 Ω, 50 Ω System
Gain vs Frequency
24
Return Loss vs Frequency
0
Temp.=+25°C
Temp.=+25°C
22
-10
100
Temp.=+25°C
80
ICC vs. VDE
20
60
-20
|S11|
18
|S22|
40
-30
16
20
14
-40
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
3.2
3.3
3.4
3.5
3.6
Frequency (GHz)
Frequency (GHz)
VDE (V)
OIP3 vs. Frequency
28
+85°C
+25°C
26
−40°C
24
22
20
500
1000
1500
2000
Frequency (MHz)
2500
3000
16
14
12
10
8
6
500
Output P1dB vs. Frequency
+85°C
+25°C
−40°C
1000
1500
2000
Frequency (MHz)
2500
3000
5
4
3
2
1
0
500
Noise Figure vs. Frequency
1000
Temp.=+25°C
1500
2000
Frequency (MHz)
2500
3000
Typical Device S-Parameters
Test conditions unless otherwise noted: VDEVICE = +3.4 V, ICC = 30 mA, Temp. =+25 °C, calibrated to device leads
Frequency (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB)
50
−33.58
15.96
22.85
178.01 −24.47
−1.35
−28.60
500
−24.53
12.09
22.63
162.01 −24.14
1.89
−22.29
1000
−32.76
32.44
22.20
144.90 −23.99
4.76
−25.75
1500
−28.56 153.22
21.54
129.42 −23.56
7.59
−20.80
2000
−25.13 172.50
20.74
114.94 −23.12
9.11
−17.59
2500
−28.01 −117.92 20.11
103.13 −22.71
7.41
−20.44
3000
−28.65 −133.85 19.33
91.28
−22.14
7.37
−18.13
3500
−28.35 −142.02 18.59
79.59
−21.68
4.16
−16.41
4000
−25.99 −171.80 17.77
68.13
−20.88
2.49
−14.29
4500
−22.91 160.22
17.05
57.38
−20.50
2.47
−12.47
5000
−19.69 153.85
16.39
48.12
−20.03
−0.55
−11.36
5500
−17.30 152.52
15.78
39.49
−19.55
−5.36
−11.30
6000
−15.88 144.43
15.21
30.49
−19.14
−6.76
−11.31
Device S-parameters are available for download at www.triquint.com
S22 (ang)
3.58
−35.35
−100.14
−165.24
175.89
169.69
154.41
140.24
124.73
116.41
113.60
114.22
113.24
Datasheet: Rev. A 12-05-14
© 2014 TriQuint
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Disclaimer: Subject to change without notice
www.triquint.com
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