ECG001B-G Просмотр технического описания (PDF) - TriQuint Semiconductor
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Компоненты Описание
производитель
ECG001B-G Datasheet PDF : 5 Pages
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ECG001B
InGaP HBT Gain Block
Typical Device RF Performance
Supply Bias = +5 V, Rbias = 51 Ω, Icc = 30 mA
Frequency
S21
S11
S22
Output P1dB
Output IP3
Noise Figure
MHz
dB
dB
dB
dBm
dBm
dB
100
22.8
-48
-34
+11.6
+23.6
3.4
500
22.6
-46
-29
+11.6
+23.5
3.4
900
22.4
-42
-24
+12.6
+24.8
3.4
1900
21.4
-35
-18
+12.6
+26
3.4
2140
21.0
-29
-17
+12.6
+25.6
3.4
2400
20.7
-28
-16
+12.8
+25.4
3.4
3500
19.2
-22
-13
+12.2
+23
5800
16.1
-14
-8
+11
1. Test conditions: T = 25º C, Supply Voltage = +5 V, Device Voltage = +3.4 V, Rbias = 51 Ω, Icc = 30 mA typical, 50 Ω System.
2. 3OIP measured with two tones at an output power of -1 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit.
Gain
24
Return Loss
0
Icc vs. Vde
100
22
-10
80
20
60
-20
18
40
16
-30
20
S11 S22
14
-40
0
0123456
0123456
3.2
3.3
3.4
3.5
3.6
Frequency (GHz)
Frequency (GHz)
Vde (V)
OIP3 vs. Frequency
28
Noise Figure vs. Frequency
5
P1dB vs. Frequency
18
26
24
22
20
500
4
3
2
1
+25C -40C +85C
0
1000 1500 2000 2500 3000 500
Frequency (MHz)
1000 1500 2000 2500
Frequency (MHz)
16
14
12
10
8
6
3000
500
+25C -40C +85C
1000 1500 2000 2500 3000
Frequency (MHz)
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc • Phone +1-503-615-9000 • FAX: +1-503-615-8900 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com
Page 2 of 5 August 2011
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