ECG006F-G Просмотр технического описания (PDF) - TriQuint Semiconductor
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производитель
ECG006F-G Datasheet PDF : 4 Pages
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ECG006F
InGaP HBT Gain Block
Typical Device Data
Supply Bias = +5 V, Rbias = 24.3 , Icc = 45 mA
Frequency
S21
S11
S22
Output P1dB
Output IP3
Noise Figure
MHz
dB
dB
dB
dBm
dBm
dB
100
15.7
-16
-14
+15.8
+31
3.8
500
15.6
-15
-13
+15.4
+31.5
3.7
900
15.5
-16.5
-14
+15.2
+32
3.6
1900
14.8
-14
-13.5
+15.0
+30
3.6
2140
14.7
-14
-13.5
+14.9
+30
3.6
2400
14.5
-13
-13
+14.6
+29.6
3.6
3500
13.9
-12
-12
+14
4500
13.0
-10.5
-9.5
1. Test conditions: T = 25º C, Supply Voltage = +5 V, Device Voltage = +3.9 V, Rbias = 24.3 , Icc = 45 mA typical, 50 System.
2. 3OIP measured with two tones at an output power of +2 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit.
Gain vs. Frequency
S11, S22 vs. Frequency
Vde vs. Icc
18
0
90
80
16
-5
70
60
14
-10
S22
50
+25C
12
-15
40
30
10
-20
+25C -40C +85C
20
S11
10
8
-25
0
500 1000 1500 2000 2500 3000
0
1
2
3
4
5
6
3.00 3.20 3.40 3.60 3.80 4.00 4.20 4.40
Frequency (MHz)
Frequency (GHz)
Vde (V)
OIP3 vs. Frequency
35
Noise Figure vs. Frequency
4
30
3.5
25
3
20
15
500
+25°C -40°C +85°C
1000 1500 2000 2500 3000
Frequency (MHz)
2.5
2
500
1000
1500
Frequency (MHz)
P1dB vs. Frequency
18
16
14
12
10
+25°C -40°C +85°C
8
2000
500 1000 1500 2000 2500 3000
Frequency (MHz)
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8900 e-mail: info-sales@tqs.com Web site: www.TriQuint.com
Page 2 of 4 March 2012
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