UPG158 Просмотр технического описания (PDF) - NEC => Renesas Technology

Номер в каталоге

Компоненты Описание

производитель

UPG158

L, S- BAND SPDT SWITCH

NEC => Renesas Technology 

DATA SHEET

GaAs INTEGRATED CIRCUIT

µPG158TB

L, S- BAND SPDT SWITCH

DESCRIPTION

The µPG158TB is a L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital

cellular, cordless telephone and other L, S-band wireless application. The device can operate from 500 MHz to 2.5

GHz, having the low insertion loss. It housed in an original 6-pin super minimold package that is smaller than usual

6-pin minimold easy to install and contributes to miniaturizing the system.

FEATURES

• Low Insertion Loss: LINS = 0.3 dB TYP. @VCONT = +3.0 V/0 V, f = 1 GHz

LINS = 0.4 dB TYP. @VCONT = +3.0 V/0 V, f = 2 GHz

LINS = 0.5 dB TYP. @VCONT = +3.0 V/0 V, f = 2.5 GHz

• High isolation: ISL = 27 dB TYP. @VCONT = +3.0 V/0 V, f = 0.5 to 2 GHz

• Small 6-pin super minimold package (Size: 2.0 × 1.25 × 0.9 mm)

APPLICATIONS

• L, S-band digital cellular or cordless telephone

• PCS, WLAN, WLL and Bluetooth applications

ORDERING INFORMATION

Part Number

µPG158TB-E3

Marking

G1M

Package

6-pin super minimold

Supplying Form

Embossed tape 8 mm wide.

Pin 1, 2, 3 face to tape perforation side.

Qty 3 kp/reel.

Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample

order: µPG158TB)

Caution The IC must be handled with care to prevent static discharge because its circuit is composed of

GaAs MES FET.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. P14267EJ2V0DS00 (2nd edition)

Date Published November 1999 N CP(K)

The mark shows major revised points.

Printed in Japan

©

1999

Share Link: