DTC114EE Просмотр технического описания (PDF) - Galaxy Semi-Conductor
Номер в каталоге
Компоненты Описание
производитель
DTC114EE Datasheet PDF : 3 Pages
| |||
Production specification
Digital Transistor
DTC(R1=R2 SERIES)E
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Input Voltage
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistor
Resistance Ratio
DTC114EE
DTC124EE
DTC143EE
DTC144EE
DTC114EE
DTC124EE
DTC143EE
DTC144EE
DTC114EE
DTC124EE
DTC143EE
DTC144EE
DTC114 EE
DTC124EE
DTC143EE
DTC144EE
DTC114EE
DTC124EE
DTC143EE
DTC144EE
Gain-Bandwidth Product
VI(off)
VI(on)
VCC=5V,IO=100μA
VO=0.3V,IO=10mA
VO=0.2V,IO=5mA
VO=0.3V,IO=20mA
VO=0.3V,IO=2mA
0.5 1.1 -
V
- 1.9 3
VO(on)
Io/II=10mA/0.5mA,
- 0.1 0.3 V
II
IO(off)
GI
R1(R2)
R2/R1
fT
VI=5V
VCC=50V,VI=0V
VO=5V,IO=5mA
VO=5V,IO=5mA
VO=5V,IO=10mA
VO=5V,IO=5mA
-
VCE=10V,IE=-5mA,
f=100MHz
0.88
0.36
-
-
mA
1.8
0.18
-
- 0.5 μA
30
56
-
-
20
68
7 10 13
15.4 22 28.6
3.29 4.7 6.11 kΩ
32.9 47 61.1
0.8 1 1.2
- 250 - MHz
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
H035
Rev.A
www.gmesemi.com
2
Share Link: 